DocumentCode
3478360
Title
Influence of photoresist on wafer charging during high current arsenic implant
Author
Lukaszek, Wes ; Reno, S. ; Bammi, R.
Author_Institution
Wafer Charging Monitors Inc., Woodside, CA, USA
fYear
1996
fDate
16-21 Jun 1996
Firstpage
89
Lastpage
92
Abstract
Surface-substrate potentials and charge fluxes observed during a high-current Arsenic implant on a wafer half-covered with photoresist were quantified using a CHARM(R)-2 charging monitor wafer. High negative potentials were observed on the bare portion of the wafer, while high positive potentials were observed on the photoresist-covered portion of the wafer. Substantially enhanced positive charge-flux was observed near the resist edge, on the bare side of the wafer. A model is proposed to explain these phenomena
Keywords
arsenic; elemental semiconductors; ion implantation; photoresists; silicon; surface charging; surface potential; CHARM-2 monitor; Si:As; charge flux; high current arsenic implantation; photoresist; surface-substrate potential; wafer charging; Current measurement; EPROM; Implants; Resistors; Resists; Semiconductor device modeling; Sensor phenomena and characterization; Surface charging; Threshold voltage; Vehicles;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586135
Filename
586135
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