Title :
Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics
Author :
Hsiao-Hsuan Hsu ; Chun-Yen Chang ; Chun-Hu Cheng ; Shu-Hung Yu ; Ching-Yuan Su
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm2/Vs, and a good Ion/Ioff ratio of 3.7×105. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-κ TiO2.
Keywords :
II-VI semiconductors; amorphous semiconductors; flexible electronics; gallium compounds; germanium compounds; high-k dielectric thin films; indium compounds; thin film transistors; titanium compounds; wide band gap semiconductors; zinc compounds; GeO2-TiO2; InGaZnO; amorphous thin-film transistor; field effect mobility; flat plastic substrate; flexible TFTs; flexible polycarbonate substrate; high drive current; higher-κ dielectric; low operation voltage; stacked gate dielectrics; voltage 2.2 V; Artificial intelligence; Equations; Logic gates; Plastics; Substrates; Thin film transistors; GeO2; TiO2; flexible; thin film transistor (TFT);
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628218
