Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics

Author

Hsiao-Hsuan Hsu ; Chun-Yen Chang ; Chun-Hu Cheng ; Shu-Hung Yu ; Ching-Yuan Su

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO₂/TiO₂ on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm²/Vs, and a good I_on/I_off ratio of 3.7×10⁵. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO₂ and higher-κ TiO₂.

Keywords

II-VI semiconductors; amorphous semiconductors; flexible electronics; gallium compounds; germanium compounds; high-k dielectric thin films; indium compounds; thin film transistors; titanium compounds; wide band gap semiconductors; zinc compounds; GeO₂-TiO₂; InGaZnO; amorphous thin-film transistor; field effect mobility; flat plastic substrate; flexible TFTs; flexible polycarbonate substrate; high drive current; higher-κ dielectric; low operation voltage; stacked gate dielectrics; voltage 2.2 V; Artificial intelligence; Equations; Logic gates; Plastics; Substrates; Thin film transistors; GeO2; TiO2; flexible; thin film transistor (TFT);

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628218

Filename

6628218