DocumentCode
3478387
Title
A low operating voltage IGZO TFT using LaLuO3 gate dielectric
Author
Kun-I Chou ; Hsiao-Hsuan Hsu ; Chun-Hu Cheng ; Kai-Yu Lee ; Shang-Rong Li ; Chin, Alvin
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2013
fDate
3-5 June 2013
Firstpage
1
Lastpage
2
Abstract
This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-κ lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-κ LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μFE) of 6.6 cm2/V-s. The low VT and small SS allow device operation voltage below 2.5 V.
Keywords
gallium compounds; high-k dielectric thin films; indium compounds; lanthanum compounds; low-power electronics; InGaZnO4; LaLuO3; acceptable mobility; conduction band offset; high-k gate dielectric; low operating voltage thin film transistor; subthreshold swing; threshold voltage; voltage 0.32 V; Artificial intelligence; Capacitors; Logic gates; Waste heat; InGaZnO; LaLuO3 ; thin film transistor (TFT);
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location
Hong Kong
Type
conf
DOI
10.1109/EDSSC.2013.6628219
Filename
6628219
Link To Document