Title :
A high self-resonant and quality factor transformer using novel geometry for silicon based RFICs
Author :
Hua-Bin Zhang ; Min Cai ; Xiao-Yong He ; Gui-Hui Chen ; Hai-Jun Wu
Author_Institution :
Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China
Abstract :
A novel 24-sided concave-convex geometry monolithic transformer that has high self-resonant frequency and quality factor is presented. It is implemented with the top level thick Cu metal and multiple geometrical structures in 0.13 um CMOS mixed-signal 1P6M salicide back-end process. Compared to those with conventional square, hexagonal and octagonal geometry structure, the novel transformer achieves better quality factor, self-resonant frequency and less chip area. The simulation results show that 1.12, 1 and 0.58 GHz improvements in SRF, and 2.4, 0.9 and 0.3 enhancements in quality factor are obtained respectively when compared to typical square, hexagonal and octagonal transformer with the same inductance of the primary and secondary winding.
Keywords :
CMOS integrated circuits; Q-factor; copper; elemental semiconductors; geometry; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; silicon; transformers; CMOS mixed-signal 1P6M salicide back-end process; RFIC; Si; chip area; concave-convex geometry monolithic transformer; frequency 0.58 GHz; frequency 1 GHz; frequency 1.12 GHz; hexagonal transformer; multiple geometrical structures; octagonal transformer; primary winding; quality factor; quality factor transformer; secondary winding; self-resonant frequency factor; self-resonant transformer; size 0.13 mum; square transformer; CMOS integrated circuits; Coils; Couplings; Geometry; Inductance; Q-factor; Radiofrequency integrated circuits; concave-convex structure; monolithic; multiple; self-resonance; transformer;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628223
