Uniformity improvement of Al-doped HfO2 resistive switching memory devices using a novel diffusion approach

Author

Weibing Zhang ; Di Yu ; Feifei Zhang ; Rui Liu ; Bing Chen ; Lifeng Liu ; Dedong Han ; Jinfeng Kang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

A diffusion doping approach is adopted to fabricate Al-doped HfO₂ resistive random access memory (RRAM) devices, using the new Hf/Al/Hf diffusion structure with a two-step furnace annealing process, to avoid the formation of AlOx interfacial layer between HfO₂ layer and electrodes. The uniformity of key switching parameters is improved significantly in the Al-doped HfO₂ devices. This performance improvement is attributed to the reduced formation energy of oxygen vacancy (V_O) induced by trivalent Al-doping effect and so the improved stability of V_O conductive filaments (CFs).

Keywords

aluminium; annealing; diffusion; electrodes; furnaces; hafnium compounds; memory architecture; random-access storage; BRAN devices; CF; HfO₂:Al; conductive filaments; diffusion doping approach; diffusion structure; electrodes; interfacial layer; key switching parameters; oxygen vacancy; resistive random access memory devices; resistive switching memory devices; trivalent doping effect; two-step furnace annealing process; uniformity improvement; Annealing; CMOS integrated circuits; CMOS technology; Hafnium; Nanoscale devices; Performance evaluation; Switches; Al-doped HfO2; RRAM; diffusion; uniformity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628225

Filename

6628225