Title :
Fabrication and characteristics of fully transparent Aluminum-doped zinc oxide thin-film transistors
Author :
Dongfang Shan ; Dedong Han ; Fuqing Huang ; Yu Tian ; Suoming Zhang ; Yingying Cong ; Yi Wang ; Lifeng Liu ; Xing Zhang ; Shengdong Zhang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Fully transparent Aluminum-doped zinc oxide (AZO) thin-film transistors (TFTs) were fabricated using radio frequency sputtering at room temperature. To ensure transparency, the AZO-TFTs were fabricated on glass substrate, with SiO2 as gate insulator. Indium tin oxide (ITO) was adopted as gate and source/drain electrodes. The electrical characteristics of AZO-TFT were investigated by IDS-VDS and IDS-VGS measurements, excellent electrical properties were obtained. Furthermore, we researched the post-annealing effects on characteristics of AZO-TFT.
Keywords :
II-VI semiconductors; aluminium; annealing; indium compounds; silicon compounds; sputter deposition; thin film transistors; tin compounds; zinc compounds; InSnO; SiO2; ZnO:Al; fully transparent thin film transistors; glass substrate; post-annealing effects; radiofrequency sputtering; source-drain electrodes; temperature 293 K to 298 K; Annealing; Frequency measurement; Glass; Indium tin oxide; Sputtering; Switches; Zinc oxide; Aluminum-doped Zinc Oxide; Fully transparent; Post-annealing; Thin-film transistors;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628226
