Fabrication and characteristics of fully transparent Aluminum-doped zinc oxide thin-film transistors

Author

Dongfang Shan ; Dedong Han ; Fuqing Huang ; Yu Tian ; Suoming Zhang ; Yingying Cong ; Yi Wang ; Lifeng Liu ; Xing Zhang ; Shengdong Zhang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

Fully transparent Aluminum-doped zinc oxide (AZO) thin-film transistors (TFTs) were fabricated using radio frequency sputtering at room temperature. To ensure transparency, the AZO-TFTs were fabricated on glass substrate, with SiO₂ as gate insulator. Indium tin oxide (ITO) was adopted as gate and source/drain electrodes. The electrical characteristics of AZO-TFT were investigated by I_DS-V_DS and I_DS-V_GS measurements, excellent electrical properties were obtained. Furthermore, we researched the post-annealing effects on characteristics of AZO-TFT.

Keywords

II-VI semiconductors; aluminium; annealing; indium compounds; silicon compounds; sputter deposition; thin film transistors; tin compounds; zinc compounds; InSnO; SiO₂; ZnO:Al; fully transparent thin film transistors; glass substrate; post-annealing effects; radiofrequency sputtering; source-drain electrodes; temperature 293 K to 298 K; Annealing; Frequency measurement; Glass; Indium tin oxide; Sputtering; Switches; Zinc oxide; Aluminum-doped Zinc Oxide; Fully transparent; Post-annealing; Thin-film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628226

Filename

6628226