Title :
A high gain fully integrated CMOS LNA for WLAN and Bluetooth application
Author :
Laichun Yang ; Yuexing Yan ; Yiqiang Zhao ; Jianguo Ma ; Guoxuan Qin
Author_Institution :
Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China
Abstract :
In this paper a 1.8 V, 2.4 GHz CMOS fully integrated low noise amplifier (LNA) has been implemented in 0.18 μm RF CMOS process for Wireless Local Area Net (WLAN) and Bluetooth band. Acceptable consumption with higher voltage and power gain are achieved using traditional cascode configuration. In this configuration, we successed to have a good trade off among noise, gain, and stability. In order to achieve good input matching for narrow bandwidth the inductive source degeneration LNA topology is used. The LNA power gain is 22.1 dB, noise figure is 1.47 dB and the power consumption is 11 mW from a single 1.8 V power supply.
Keywords :
Bluetooth; CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; low noise amplifiers; wireless LAN; Bluetooth application; RF CMOS process; WLAN; cascode configuration; frequency 2.4 GHz; gain 22.1 dB; high gain fully integrated CMOS LNA; inductive source degeneration; low noise amplifier; noise figure 1.47 dB; power 11 mW; power gain; size 0.18 mum; voltage 1.8 V; wireless local area network; CMOS integrated circuits; Gain; Logic gates; Noise; Noise figure; Radio frequency; Transistors; RF CMOS; fully integrated; input matching; low noise amplifier (LNA); noise Figure; power gain;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628229
