DocumentCode
3478614
Title
Applications of surface analytical techniques for metals reduction in ion implantation
Author
Downey, Daniel F. ; Zhao, Zhiyong ; Angel, Gordon ; Eddy, Ronald J. ; Sullivan, Philip
Author_Institution
Varian Ion Implant Syst., Gloucester, MA, USA
fYear
1996
fDate
16-21 Jun 1996
Firstpage
121
Lastpage
126
Abstract
Quadrupole and magnetic sector SIMS, total reflection X-ray fluorescence spectrometry (TXRF), vapor phase decomposition with both inductively coupled plasma mass spectrometry (VPD-ICPMS) and graphite furnace atomic absorption spectrometry (VPD-GPAAS) are used and compared in the evaluation of common metallic contaminants such as Al, Fe, Cr, Mo, W, Cu and Na in ion implanters. These analytical techniques are applied to test the effectiveness of Si coated acceleration tubes and discs, as well as other protective measures such as graphite shielding and component redesign that are required to meet future metals contamination requirements, such as total added Al of less than 100 ppm of implant and total added heavy metals less than 10 ppm. This paper also discusses the effect of particulate contamination, both from the implanter and the post implant handling and measurement, on the various analytical techniques, manufacturing SPC procedures employed in the plasma spray Si coating process, and the SPC control procedure required of our SIMS vendors and on the implanters themselves. Employing these controls and analytical techniques, examples are provided as to how an effective program was executed on the Varian VIISion series of implanters to reduce the total added Al to as low as 23 ppm of implant and heavy metals to about 10 ppm. In these studies, time and species dependent effects are observed and are explained in terms of short-term chemical and multi-step sputtering mechanisms
Keywords
X-ray fluorescence analysis; atomic absorption spectroscopy; chemical variables measurement; ion implantation; mass spectroscopic chemical analysis; metals; plasma arc spraying; secondary ion mass spectroscopy; sputtering; statistical process control; surface contamination; Al; Cr; Cu; Fe; Mo; Na; SIMS vendors; SPC control procedure; Si coated acceleration discs; Si coated acceleration tubes; Si:Al; Si:Cr; Si:Cu; Si:Fe; Si:Mo; Si:Na; Si:W; TXRF; VPD-GPAAS; VPD-ICPMS; W; common metallic contaminants; component redesign; graphite furnace atomic absorption spectrometry; graphite shielding; inductively coupled plasma mass spectrometry; ion implantation; magnetic sector SIMS; metals reduction; multi-step sputtering mechanisms; particulate contamination; plasma spray Si coating process; post implant handling; protective measures; quadrupole SIMS; short-term chemical sputtering mechanisms; species dependent effects; surface analytical techniques; time dependent effects; total added heavy metals; total reflection X-ray fluorescence spectrometry; vapor phase decomposition; Couplings; Fluorescence; Implants; Magnetic analysis; Mass spectroscopy; Plasma measurements; Pollution measurement; Reflection; Surface contamination; Thermal spraying;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586147
Filename
586147
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