Backside silicon-embedded inductor using magnetic layer for shielding and inductance enhancement

Author

Rongxiang Wu ; Wei Li ; Yongchun Ren ; Heping Luo ; Guojun Zhang

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

In this paper, a backside silicon-embedded inductor (BSEI) using a magnetic layer is proposed and studied for magnetic flux shielding and inductance enhancement. With the magnetic layer, the magnetic flux that goes under the BSEI chip is reduced by 2 to 3 times, and consequently the significant BSEI performance degradation in presence of a Cu die pad is effectively suppressed. The inductance of the BSEI is also enhanced by 30% with the magnetic layer. This makes the BSEI more promising for power supply-on-chip applications.

Keywords

copper; inductors; magnetic flux; magnetic shielding; power supply circuits; silicon; BSEI; Cu; backside silicon-embedded inductor; die pad; inductance enhancement; magnetic flux shielding; magnetic layer; power supply-on-chip application; Magnetic noise; Magnetic shielding; Silicon; Substrates; magnetic shielding; on-chip inductors; power integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628231

Filename

6628231