Title :
Development of 10 KΩ quantum Hall array resistance standards at NMIJ
Author :
Oe, T. ; Matsuhiro, K. ; Urano, C. ; Fujino, H. ; Ishii, H. ; Itatani, T. ; Sucheta, G. ; Maezawa, M. ; Kiryu, S. ; Kaneko, N.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Nat. Metrol. Inst. of Japan (NMIJ), Tsukuba, Japan
Abstract :
An experimental device of quantum Hall array resistance standards (QHARS) with a nominal value close to 10 kΩ on the i = 2 plateau have been developed on a GaAs/AlGaAs hetero-substrate. This device consists of just 266 Hall bar elements that are connected by triple connection technique. Its nominal value has only 0.034 2 ppm differences from the integer value of 104. This array device clearly shows the well-quantized 10 kΩ plateau (i=2).
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; quantum Hall effect; semiconductor heterojunctions; GaAs-AlGaAs; GaAs/AlGaAs heterosubstrate; Hall bar elements; NMIJ; array device; experimental device; integer value; nominal value; quantum Hall array resistance standards; resistance 10 kohm; triple connection technique; Bars; Contact resistance; Dry etching; Electrical resistance measurement; Gallium arsenide; Intrusion detection; Measurement standards; Standards development; Voltage; Wet etching;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2010 Conference on
Conference_Location :
Daejeon
Print_ISBN :
978-1-4244-6795-2
DOI :
10.1109/CPEM.2010.5544385
