Title :
Strain modeling in source exhaustion regime of Carbon nanotube field effect transistor
Author :
Ahmed, Zabir ; Mansun Chan
Author_Institution :
ECE, Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
Strain incorporated surface potential based compact model for Carbon Nanotube field effect transistor (CNTFET) is presented in this paper. The model is first of its kind and confers strain phenomena by accounting for the induced change in band-gap and corresponding energy band opening near the Fermi-level of the CNTFET in source exhaustion regime.
Keywords :
Fermi level; carbon nanotube field effect transistors; energy gap; CNTFET; Fermi-level; band-gap; carbon nanotube field effect transistor; energy band; source exhaustion regime; strain modeling; surface potential based compact model; Analytical models; Integrated circuit modeling; Numerical models; Strain; CNTFET; source exhaustion; strain effect; strain modeling; surface potential based model;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628235
