DocumentCode :
3478766
Title :
Electrical-thermal co-simulation for power redistribution layers of interposer with through-silicon vias
Author :
Xiaoli Ren ; Cheng Xu ; Ye Ping ; Zhi Wang ; Cheng Pang ; Daquan Yu
Author_Institution :
Nat. Center for Adv. Packaging, Wuxi, China
fYear :
2013
fDate :
11-14 Aug. 2013
Firstpage :
492
Lastpage :
497
Abstract :
In this paper, an TSV (Through-Silicon Via) Interposer with signal distribution networks (SDN) and power distribution networks (PDN) is proposed. And the temperature-dependent electrical resistivity of conductors and the Joule heating effect of the interposer are analyzed using the electrical-thermal co-simulation method. The simulation results show that the temperature effect on IR (voltage) drop is significant and can not be neglected.
Keywords :
integrated circuit interconnections; integrated circuit modelling; three-dimensional integrated circuits; IR drop; Joule heating effect; PDN; SDN; TSV interposer; electrical-thermal co-simulation; power distribution networks; power redistribution layers; signal distribution networks; temperature-dependent electrical resistivity; through-silicon-vias; Current density; Electronic packaging thermal management; Mathematical model; Temperature distribution; Thermal conductivity; Three-dimensional displays; Through-silicon vias; IR drop; PDN; RDL; electrical-thermal co-simulation; interposer; tenperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location :
Dalian
Type :
conf
DOI :
10.1109/ICEPT.2013.6756519
Filename :
6756519
Link To Document :
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