• DocumentCode
    347887
  • Title

    Photoluminescence from a VCSEL structure a-SiN/sub x/:H microcavity

  • Author

    Serpenguzel, A. ; Darici, Y.

  • Author_Institution
    Dept. of Phys., Bilkent Univ., Ankara, Turkey
  • fYear
    1992
  • fDate
    23-28 May 1992
  • Firstpage
    254
  • Lastpage
    255
  • Abstract
    Summary form only given. Microcavity effects on the photoluminescence (PL) of porous Si has already been reported. Recently, we have observed visible and near infrared (IR) PL from hydrogenated amorphous Si nitride (a-SiN/sub x/:H) grown by low temperature PECVD. We have also reported the enhancement and inhibition of PL in an a-SiN/sub x/:H microcavity formed with metallic mirrors. The a-SiN/sub x/:H used in the microcavity was grown both with and without NH/sub 3/. For the Si rich a-SiN/sub x/:H grown without NH/sub 3/, the PL is in the red-near IR. For the N rich a-SiN/sub x/:H grown with NH/sub 3/, the PL is in the blue-green. In this paper, we report on the bright and spectrally pure PL of a-SiN/sub x/:H in a VCSEL structure microcavity.
  • Keywords
    amorphous semiconductors; hydrogen; microcavity lasers; photoluminescence; silicon compounds; surface emitting lasers; SiN:H; VCSEL structure; a-SiN/sub x/:H microcavity; bright spectrally pure luminescence; hydrogenated amorphous silicon nitride; photoluminescence; photonic gain medium; Energy states; Land surface temperature; Laser transitions; Microcavities; Photoluminescence; Spontaneous emission; Stationary state; Temperature dependence; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    1-55752-576-X
  • Type

    conf

  • DOI
    10.1109/QELS.1999.807635
  • Filename
    807635