DocumentCode
347898
Title
Piloting epitaxy through ellipsometric feedback
Author
Warnick, Sean C. ; Dahleh, Munther A.
Author_Institution
Lab. for Inf. & Decision Syst., MIT, Cambridge, MA, USA
Volume
1
fYear
1999
fDate
1999
Firstpage
767
Abstract
This research explores the synthesis of feedback controllers for gas-source molecular beam epitaxy, and the related processes, using spectroscopic ellipsometry as a sensor technology. The objective in these processes is to deposit a spatially uniform film that has certain properties with respect to thickness. We approach this objective of synchronizing film properties with thickness as a relaxation of tracking with a natural separation in the feedback design. This paper surveys some of the key issues associated with the modeling, tracking, and synchronization of this system. Simulations indicate previously ungrowable structures, such as quaternary films with arbitrary graded compositions, can be realized
Keywords
ellipsometry; feedback; molecular beam epitaxial growth; process control; synchronisation; tracking; feedback control; gas-source molecular beam epitaxy; process control; quaternary films; spectroscopic ellipsometry; synchronization; tracking; Composite materials; Crystalline materials; Ellipsometry; Epitaxial growth; Feedback; Laboratories; MOCVD; Molecular beam epitaxial growth; Optical fiber devices; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Control Applications, 1999. Proceedings of the 1999 IEEE International Conference on
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-5446-X
Type
conf
DOI
10.1109/CCA.1999.807758
Filename
807758
Link To Document