Title :
Temperature-dependant thermal stress analysis of through-silicon-vias during manufacturing process
Author :
Meiying Su ; Xia Zhang ; Lixi Wan ; Daquan Yu ; Xiangmeng Jing ; Zhidan Fang ; Fengze Hou
Author_Institution :
Inst. of Microelectron., Beijing, China
Abstract :
Thermal stress is induced by high temperature manufacturing processes, due to the mismatch of Coefficient of Thermal Expansion s (CTE) between silicon, dielectric material and copper. In this paper, thermal stress around Through-Silicon-Vias (TSVs) was discussed using 3D FEA transient method. Stress distributions near a TSV and TSVs array were investigated after dielectric liner deposition, barrier layer deposition and annealing process, respectively. Moreover, stress distribution around a via was impacted by the thickness of the dielectric liner, the via diameter, the via pitch and the cooling speed during annealing process. In order to verify the simulation results, TSV samples were fabricated through a series of processes. Si Raman shift profiles near a TSV was also measured and calculated. The simulation results coincided with the real measurement value in tolerable error range.
Keywords :
annealing; copper alloys; dielectric materials; elemental semiconductors; finite element analysis; integrated circuit manufacture; integrated circuit packaging; silicon; silicon compounds; thermal expansion; thermal stresses; three-dimensional integrated circuits; titanium alloys; transient analysis; 3D FEA transient method; CTE; Raman shift profiles; Si-SiO2-Ti-Cu; TSV array; annealing process; barrier layer deposition; coefficient of thermal expansion; cooling speed; dielectric liner deposition; dielectric material; high temperature manufacturing processes; stress distributions; temperature-dependant thermal stress analysis; through-silicon-vias; Annealing; Cooling; Silicon; Stress; Thermal analysis; Thermal stresses; Through-silicon vias; TSV; temperature-dependant; thermal stress;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location :
Dalian
DOI :
10.1109/ICEPT.2013.6756532