Photoresist integrity during high energy implant

Author

Parrill, T.M. ; Jones, Mary ; Jain, Amitabh

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

178

Lastpage

181

Abstract

Photoresist integrity was evaluated on a commercial high-energy ion implanter operated up to the specified energy (1.7 MeV B or 3.0 MeV P) and power (1.0 MeV B at 1000 pμA or 2.0 MeV P at 500 pμA) limits. SEM Cross-sectional analysis of several photoresists showed that the proper cooling was maintained to avoid significant photoresist degradation. Photoresist shrinkage was observed, resulting in thickness reductions up to 22% and significant changes in sidewall slope. Little asymmetry was observed when photoresist was implanted at a 7° tilt. At the specified power limits, photoresist outgassing prevented smooth implant operation unless pressure compensation was implemented

Keywords

ion implantation; photoresists; scanning electron microscopy; 1.0 to 3.0 MeV; B; P; SEM cross-sectional analysis; cooling; high-energy ion implantation; outgassing; photoresist integrity; pressure compensation; shrinkage; sidewall slope; Cooling; Degradation; Electrical resistance measurement; Geometry; Implants; Instruments; Pressure measurement; Resists; Scanning electron microscopy; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586178

Filename

586178