Title :
Profile analysis of a 0.25 μm CMOS process
Author :
Current, Michael I. ; Castle, Matt ; Chia, Victor ; Mount, Gary ; Weinzierl, Steve ; Prussin, Si ; Larson, Larry
Author_Institution :
Appl. Materials, Austin, TX, USA
Abstract :
A complete set of doping profiles for a SEMATECH 0.25 μm CMOS/DRAM model process were implanted into 200 mm wafers with a 9500×R implanter. The implants ranged in energy from 10 to 600 keV over a dose range from 7×1011 to 3×1015 ions/cm2. The profiles were analyzed with an array of SIMS and SRP and junction staining techniques. Both as-implanted and annealed profiles were measured
Keywords :
CMOS memory circuits; DRAM chips; annealing; doping profiles; ion implantation; secondary ion mass spectra; 0.25 micron; 10 to 600 keV; SEMATECH CMOS/DRAM process; SIMS; SRP; annealing; doping profile; ion implantation; junction staining; Annealing; CMOS process; Cities and towns; Doping profiles; Dynamic range; Implants; Magnetic analysis; Mass spectroscopy; Semiconductor device modeling; Semiconductor process modeling;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586182
