Dose and damage control of MeV-implants by photothermal heterodyne analysis

High energy ion implantation in silicon is used to create different damage profiles in depths up to 25 μm. In order to control the irradiation parameters a fast nondestructive evaluation of the created radiation damage is realized by the photothermal heterodyne technique. A 5.4 MeV-He-implant in comparison with that of a 5.4 MeV-Si-implant is investigated, The dose is evaluated over a wide range from 5×10⁹ cm^-2 up to 10¹⁴ cm^-2. The sweep of the modulation frequency allows one to probe the radiation damage in different depths corresponding to the penetration depth of the excess carrier wave. Possibilities and limits of the depth profiling by the frequency dependent response analysis are demonstrated and discussed