DocumentCode
3479217
Title
Finite element analysis of electromagnetic fields emitted by an IGBT commutation cell
Author
Sitzia, A.M.
Author_Institution
GEC Alsthom Eng. Res. Centre, Stafford, UK
fYear
1997
fDate
35761
Firstpage
42522
Lastpage
42525
Abstract
In response to concern over electromagnetic compatibility (EMC) aspects of all types of electrical equipment, numerical techniques for field computation are becomingly increasingly important in the struggle to meet the required EMC standards. This paper describes a programme of work undertaken to assess the suitability of electromagnetic finite element analysis for modelling power electronic circuits, using an IGBT commutation cell as an example
Keywords
insulated gate bipolar transistors; IGBT commutation cell; electrical equipment; electromagnetic compatibility; electromagnetic field; finite element analysis; numerical technique; power electronic circuit;
fLanguage
English
Publisher
iet
Conference_Titel
High Frequency Simulation: Part Two (Digest No: 1997/374), IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19971263
Filename
662826
Link To Document