DocumentCode
347932
Title
2V 3 GHz low-noise bipolar wideband amplifier
Author
Lee, Wilson ; Filanovsky, I.M.
Author_Institution
Dept. of Electr. & Comput. Eng., Alberta Univ., Edmonton, Alta., Canada
Volume
2
fYear
1999
fDate
9-12 May 1999
Firstpage
627
Abstract
A low-power RF wideband amplifier is presented. It has a 24.3 dB power gain, -3 dB bandwidth of 3.2 GHz, and consumes 23.7 mW power with a 2 V power supply. The circuit is implemented using Si bipolar process, NT25, which has f/sub T/ of 25 GHz. Both input and output impedances are matched at 50 ohms. This amplifier is suitable for applications that require wide bandwidth and high linearity in the range of 1 to 3 GHz.
Keywords
MMIC amplifiers; UHF integrated circuits; bipolar analogue integrated circuits; elemental semiconductors; silicon; wideband amplifiers; 1 to 3 GHz; 2 V; 23.7 mW; 24.3 dB; 25 GHz; 3 dB bandwidth; 3.2 GHz; 50 ohm; NT25 bipolar process; RF wideband amplifier; Si; input impedances; linearity; low-noise bipolar wideband amplifier; output impedances; power gain; wide bandwidth; Application software; Bandwidth; Broadband amplifiers; Costs; Feedback circuits; Impedance matching; Noise figure; Radio frequency; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering, 1999 IEEE Canadian Conference on
Conference_Location
Edmonton, Alberta, Canada
ISSN
0840-7789
Print_ISBN
0-7803-5579-2
Type
conf
DOI
10.1109/CCECE.1999.807983
Filename
807983
Link To Document