P-ch and N-ch IGBTs for push-pull circuit in driver ICs

P-ch and N-ch IGBTs (insulated-gate bipolar transistors) have been developed for high-side and low-side switches, respectively, in a push-pull circuit. These devices are of a collector-short type in order to utilize their parasitic diodes. The P-ch IGBT has two P-buffers and a deep N-base to increase not only latch-up current, but also on-state avalanche breakdown voltage. The N-ch IGBT is combined with the output pad to produce a collector-short structure and increase the collector area to obtain larger current capacity