DocumentCode
3479479
Title
High-power 630-nm-band AIGalnP laser diodes with strain-compensated single quantum well active layer
Author
Hiroyama, R. ; Nishida, Tsutomu ; Uetani, T. ; Bessho, Y. ; Shono, M. ; Sawada, Masanori ; Ibaraki, A.
Author_Institution
Microelectronics Research Center, Sanyo Electric Co., Ltd.
Volume
11
fYear
1997
fDate
18-23 May 1997
Firstpage
335
Lastpage
336
Keywords
Diode lasers; Frequency; Nonlinear optics; Optical devices; Optical polymers; Optical recording; Optical refraction; Optical variables control; Photorefractive effect; Refractive index;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
0-7803-4125-2
Type
conf
DOI
10.1109/CLEO.1997.603229
Filename
603229
Link To Document