Title :
Chemical-mechanical polishing of bulk tungsten substrate
Author :
Jin Luo ; Yiming Zhang ; Lu Song ; Shuhui Chen ; Yuan Bian ; Tianyu Li ; Yilong Hao ; Jing Chen
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
Abstract :
Bulk tungsten is very promising for packaging and micro-devices for its high strength, radiation resistance, high melting point and conductivity. In this paper, chemical mechanical polishing of bulk tungsten substrate was carried out. A 4 inch tungsten wafer was polished at the optimized condition with an average surface roughness of 4.63nm achieved. Bulk tungsten applications in packaging and micro-devices will be expanded.
Keywords :
chemical mechanical polishing; substrates; surface roughness; thin films; tungsten; W; altitude 4.63 nm; bulk tungsten substrate; chemical mechanical polishing; conductivity; mechanical strength; melting point; microdevices; packaging; radiation resistance; surface roughness; tungsten wafer; Rough surfaces; Slurries; Surface roughness; Surface topography; Surface treatment; Tungsten; Velocity control; CMP; average surface roughness; the platen rotational speed; tungsten;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location :
Dalian
DOI :
10.1109/ICEPT.2013.6756557
