DocumentCode
3479597
Title
The study on grinding process of flip chip wafers
Author
Xiaobo Zhuang ; Binhao Lian ; Jinchun He ; Xiaocheng Feng
Author_Institution
Beijing MXTronics Corp., Beijing, China
fYear
2013
fDate
11-14 Aug. 2013
Firstpage
698
Lastpage
701
Abstract
IC technology changes with each passing day, developing towards the direction of higher integration, higher density and smaller size. The process of wire bonding can´t meet the requirements. FC(Flip chip) technology becomes more mature day by day. Bump interconnection is an important characteristic of flip chip, usually consisting of PbSn alloy or SnAgCu alloy. In order to ensure the effective interconnection between bumps and substrates, the bumps need keep coplanar. However, certain pressure will act on wafers during the process of grinding and taping. The question of how to protect bumps from deformation and How to reduce the damage layer after grinding will be studied Dicing is the process after grinding. Taping is also used before dicing. The technological process will be introduced.
Keywords
flip-chip devices; grinding; FC technology; IC technology; bump interconnection; damage layer reduction; deformation; dicing process; effective interconnection; flip chip wafers; grinding process; substrates; taping process; technological process; wire bonding; Electronics packaging; Feeds; Flip-chip devices; Metals; Rough surfaces; Surface roughness; Surface treatment; Flip chip; dicing; grinding; taping;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location
Dalian
Type
conf
DOI
10.1109/ICEPT.2013.6756562
Filename
6756562
Link To Document