Title :
An Over-Erasure Detection Technique for Tightening Vth Distribution for Low Voltage Operation Nor Type Flash Memory
Author :
Miyawaki, Y. ; Nakayama, T. ; Mihara, M. ; Kawai, S. ; Ohkawa, M. ; Ajika, N. ; Hatanaka, M. ; Terada, Y. ; Yoshihara, T.
Author_Institution :
ULSI laboratory, Mitsubishi Electric Corporation, Itami, Japan
Keywords :
Boosting; Circuits; Equations; Flash memory; Fluctuations; Laboratories; Low voltage; Manufacturing processes; Nonvolatile memory; Threshold voltage;
Conference_Titel :
VLSI Circuits, 1994. Digest of Technical Papers., 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1918-4
DOI :
10.1109/VLSIC.1994.586216
