• DocumentCode
    3479979
  • Title

    RB-IGBT gate drive circuit and its application in two-stage matrix converter

  • Author

    Li, Gang ; Sun, Kai ; Huang, Lipei ; Igarashi, Seiki

  • Author_Institution
    State Key Lab of Power Systems, Department of Electrical Engineering, Tsinghua University, Beijing 100084, CHINA
  • fYear
    2005
  • fDate
    27-30 June 2005
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Compared with conventional direct matrix converter, two-stage matrix converter has similar input/output characteristic. Furthermore, two-stage matrix converter can be implemented and controlled much easier since it has a practical dc-link. RB-IGBT is employed to construct bi-directional switches in two-stage matrix converter, which reduces on-state voltage drop and power loss of the converter. In this paper, a gate drive circuit for RB-IGBT with short-circuit protection based on integrated chip EXB841 is proposed. Experimental results validate the good performance of the proposed circuit in terms of switching test, fault under load test and hard switching fault test. The proposed gate drive circuit has been applied to drive the RB-IGBT bi-directional switches in the rectifier stage of two-stage matrix converter. The implementation of 10kW two-stage matrix converter prototype using RB-IGBT is presented, and the experimental results on the rectifier stage of two-stage matrix converter using RB-IGBT is shown to test the proposed gate drive circuit.
  • Keywords
    Bidirectional control; Circuit faults; Circuit testing; Matrix converters; Protection; Rectifiers; Switches; Switching circuits; Switching converters; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Tech, 2005 IEEE Russia
  • Conference_Location
    St. Petersburg, Russia
  • Print_ISBN
    978-5-93208-034-4
  • Electronic_ISBN
    978-5-93208-034-4
  • Type

    conf

  • DOI
    10.1109/PTC.2005.4524336
  • Filename
    4524336