DocumentCode :
348
Title :
Advantages of Blue LEDs With Graded-Composition AlGaN/GaN Superlattice EBL
Author :
Bing-Cheng Lin ; Kuo-Ju Chen ; Hau-Vei Han ; Yu-Pin Lan ; Ching-Hsueh Chiu ; Chien-Chung Lin ; Min-Hsiung Shih ; Po-Tsung Lee ; Hao-Chung Kuo
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
25
Issue :
21
fYear :
2013
fDate :
Nov.1, 2013
Firstpage :
2062
Lastpage :
2065
Abstract :
InGaN/GaN light-emitting diodes (LEDs) with graded-composition AlGaN/GaN superlattice (SL) electron blocking layer (EBL) were designed and grown by metal-organic chemical vapor deposition. The simulation results demonstrated that the LED with a graded-composition AlGaN/GaN SL EBL have superior hole injection efficiency and lower electron leakage over the LED with a conventional AlGaN EBL or normal AlGaN/GaN SL EBL. Therefore, the efficiency droop can be alleviated to be ~ 20% from maximum at an injection current of 15-120 mA, which is smaller than that for conventional AlGaN EBL (30%). The corresponding experimental results also confirm that the use of a graded-composition AlGaN/GaN SL EBL can markedly enhance the light output power by 60%.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; light emitting diodes; semiconductor quantum wells; semiconductor superlattices; AlGaN-GaN; Blue LED; current 15 mA to 20 mA; efficiency droop; electron leakage; graded-composition SL EBL; graded-composition superlattice electron blocking layer; hole injection efficiency; injection current; light emitting diodes; metal-organic chemical vapor deposition; Aluminum gallium nitride; Charge carrier processes; Electric potential; Gallium nitride; Light emitting diodes; Power generation; Superlattices; Light-emitting diodes (LEDs); quantum well (QWs); superlattice (SL);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2013.2281068
Filename :
6589944
Link To Document :
بازگشت