Advanced failure analysis techniques for SiP defect location and mechanism analysis

Author

Na Lin ; Yuan Chen ; Guoyuan Li

Author_Institution

Sch. of Electron. & Inf. Eng., SCUT, Guangzhou, China

fYear

2013

fDate

11-14 Aug. 2013

Firstpage

794

Lastpage

797

Abstract

System in Package (SiP) has become a popular technology along with the tendency of functionality and portability for electronic devices. Due to the complex design, dimension, and materials in SiP system, some of traditional failure analysis methods are not applicable any more, or have to be improved to meet the specific requirements of SiP structures. In this paper, some advanced techniques for failure analysis in SiP are introduced, including 3D X-ray microscopy, Lock-In Thermography (LIT), Photon Emission Microscopy (PEM) and Focus Ion Beam (FIB). 3D X-ray microscopy is a powerful method to display the virtual cross-section of failure structures, LIT and PEM are used to locate electrical defects. FIB cross sectioning preparation plays an important role in mechanism analysis. Experimental results show that these advanced techniques effectively suit for SiP defect location and mechanism analysis.

Keywords

X-ray microscopy; failure analysis; focused ion beam technology; infrared imaging; integrated circuit design; system-in-package; 3D X-ray microscopy; FIB technology; LIT; PEM; SiP defect location system; advanced failure analysis technique; electronic device; focus ion beam technology; lock-in thermography; mechanism analysis; photon emission microscopy; portability; system in package; Electronic components; Electronics packaging; Failure analysis; Materials; Microscopy; Three-dimensional displays; X-ray imaging; 3D X-ray; FIB; LIT; SiP; defect location; failure analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2013 14th International Conference on

Conference_Location

Dalian

Type

conf

DOI

10.1109/ICEPT.2013.6756584

Filename

6756584