DocumentCode :
3480206
Title :
Analysis of accelerator consumption in TSV copper electroplating
Author :
Qi Sun ; Haiyong Cao ; Huiqin Ling ; Ming Li
Author_Institution :
Inst. of Microelectron. Mater. & Technol., Shanghai Jiao Tong Univ., Shanghai, China
fYear :
2013
fDate :
11-14 Aug. 2013
Firstpage :
818
Lastpage :
821
Abstract :
Accelerator consumption was analyzed by electrochemical method. As the presence of SPS and PEG in the acidic cupric sulfate solution with chloride ions, the cathodic polarization curves become have peaks and valleys. The peak and valley have a strong association with the additive concentration and are associated with the electroplating process. The effect of electroplating time on the cathodic polarization curves is similar to the effect of SPS concentration. The linear relation between parameter Q with the concentration of SPS is Q = 0.007624 + 0.150992CSPS. The parameter Q is useful for the analysis of SPS consumption in TSV copper electroplating. The real deposition in TSV verifies that SPS consumption in the process of plating can be obtained by analyzing cathodic polarization curves.
Keywords :
electrochemistry; electroplating; integrated circuit packaging; polymers; three-dimensional integrated circuits; PEG; SPS; TSV copper electroplating process; accelerator consumption analysis; acidic cupric sulfate solution; additive concentration; bis-(3-sodiumsulfo-propyl disulfide); cathodic polarization curve; chloride ion; electrochemical method; polyethylene glycol; Additives; Copper; Electronics packaging; Ions; Standards; Sun; Through-silicon vias; Accelerator; Cathodic polarization curve; Consumption; Eletrodeposition; Through-silicon via;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location :
Dalian
Type :
conf
DOI :
10.1109/ICEPT.2013.6756589
Filename :
6756589
Link To Document :
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