High performance tunable 1.5 μm InGaAs/InGaAsP multiple-quantum-well distributed-Bragg-reflector lasers

Author

Koch, T.L. ; Koren, U. ; Miller, B.I.

fYear

1988

fDate

Aug. 29 1988-Sept. 1 1988

Firstpage

120

Lastpage

121

Abstract

Tunable semiconductor lasers[1-3] are expected to play a major roll in both high-speed direct detection wavelength-division-multiplexed (WDM) systems and coherent heterodyne detection systems. Here we describe the structure and properties of multi-section tunable dynamic-single mode multiple-quantum-well (MQW) distributed-Bragg-reflector (DBR) lasers operating at 1.5 μm. These lasers display how threshold, excellent differential quantum efficiency, large tuning range, with both low chirp under high-speed direct modulation and narrow linewidth under CW operation.

Keywords

distributed Bragg reflector lasers; laser tuning; semiconductor junction lasers; 0.86 to 1.0 micron; 1.3 micron; 1.5 micron; InGaAs-GaAs; InGaAs-InGaAsP; TM-polarised light input; acousto-optically tuned semiconductor lasers; continuous tuning ranges; distributed Bragg reflector lasers; high power strained layer lasers; multiple quantum well lasers; nonplanar laser arrays; quantum well heterostructure periodic laser arrays; spectral linewidths; tunable lasers; tunable optical-wavelength conversion laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1988. Conference Digest., 11th IEEE International

Conference_Location

Boston, MA, USA

Type

conf

DOI

10.1109/SLCON.1988.26185

Filename

26185