Title :
Accurate thermal characterization of a GaN PA MMIC using Thermoreflectance thermography
Author :
Ling, J.H.L. ; Tay, A.A.O. ; Choo, Kok Fah
Author_Institution :
Dept. of Mech. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
The reliability of power microwave devices is often determined by its peak operating junction temperature. In this paper, an accurate thermal characterization of a Gallium Nitride power amplifier Monolithic Microwave Integrated Circuit device using Thermoreflectance thermography is presented. The measured gate temperatures using Thermoreflectance thermography are compared with measured temperatures using Infrared thermography and calculated temperatures from finite element analysis.
Keywords :
III-V semiconductors; MMIC power amplifiers; finite element analysis; gallium compounds; infrared imaging; integrated circuit reliability; thermal analysis; thermoreflectance; wide band gap semiconductors; GaN; PA MMIC; finite element analysis; gallium nitride power amplifier monolithic microwave integrated circuit device; infrared thermography; measured gate temperatures; peak operating junction temperature; power microwave device reliability; thermal characterization; thermoreflectance thermography; Aluminum; Electronic packaging thermal management; Gallium nitride; Logic gates; MMICs; Semiconductor device measurement; Temperature measurement; IR thermography; MMIC; Power Amplifier; Thermoreflectance;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location :
Dalian
DOI :
10.1109/ICEPT.2013.6756595
