Title :
Account for Radiation Effects in Signal Integrity Analysis of PCB Digital Systems
Author :
Petrosyants, K.O. ; Kharitonov, I.A.
Author_Institution :
Moscow Inst. of Electron. & Math., Nat. Res. Univ. “Higher Sch. of Econ.”, Moscow, Russia
Abstract :
A method of account for radiation effects (total dose and particle fluence) in signal integrity analysis of digital system by using IBIS model is presented. It is shown that account for these effects in IBIS models can be performed by correction the input impedances of protection circuits (GND_Clamp and POWER_Clamp), output MOSFETs (PULL_UP, PULL_DOWN) characteristics and RAMP parameters in according with the known physical relations. Examples of digital IC output and cross talk signals simulation with Hyper Lynx software using the created IBIS model is presented.
Keywords :
MOSFET; digital integrated circuits; printed circuits; radiation effects; signal processing; HyperLynx software; IBIS model; MOSFET; PCB digital systems; RAMP parameters; crosstalk signal simulation; digital IC output; digital system; physical relations; protection circuits; radiation effects; signal integrity analysis; Analytical models; Clamps; Integrated circuit modeling; MOSFET; Radiation effects; Semiconductor device modeling; IBIS model; MOSFET parameters; diode parameters; radiation effects; signal integrity;
Conference_Titel :
Digital System Design (DSD), 2013 Euromicro Conference on
Conference_Location :
Los Alamitos, CA
DOI :
10.1109/DSD.2013.118
