• DocumentCode
    3480525
  • Title

    An improved way to measure thermal impedance of insulated gate bipolar transistor (IGBT) module for power electronic packaging

  • Author

    Guo-Quan Lu ; Meiyu Wang ; Yunhui Mei ; Xin Li ; Lei Wang ; Gang Chen ; Xu Chen

  • Author_Institution
    Tianjin Key Lab. of Adv. Joining Technol., Tianjin Univ., Tianjin, China
  • fYear
    2013
  • fDate
    11-14 Aug. 2013
  • Firstpage
    870
  • Lastpage
    878
  • Abstract
    Recently, silver paste, silver epoxy, and solders were commonly used as die-attach materials for power electronic packaging. Thermal performance of these materials should be paid attention to since reliability of sintered or soldered jointsis highly dependent on the thermal performance. To accurately investigate the transient thermal behavior of sintered or soldered joints in electronic applications, an improved way and system for thermal impedance measurement were developed in this paper. A series of measurements utilized gate-emitter voltage as temperature-sensitive parameter at varies heating time and heating power were conducted. Significantly, through changing the heat input, the specific thermal impedance of any layer could be obtained with high accuracy, repeatability, and stability. In this way, it would be useful to understand how thermal performance of power modules varies with architecture and materials for power electronic packaging.
  • Keywords
    insulated gate bipolar transistors; modules; power semiconductor devices; semiconductor device packaging; thermal variables measurement; IGBT; die attach materials; gate-emitter voltage; heating power; heating time; insulated gate bipolar transistor; power electronic packaging; silver epoxy; silver paste; sintered joint; soldered jointsis; temperature sensitive parameter; thermal behavior; thermal impedance measurement; thermal performance; Electronic packaging thermal management; Heating; Impedance measurement; Insulated gate bipolar transistors; Logic gates; Resistance; Temperature measurement; Rth; Zth; gate-emitter voltage; insulated gate bipolar transistor (IGBT); thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
  • Conference_Location
    Dalian
  • Type

    conf

  • DOI
    10.1109/ICEPT.2013.6756601
  • Filename
    6756601