Title :
High performance integrated passive technology by SI-GaAs-based fabrication for RF and microwave applications
Author :
Wang, Cong ; Qian, Cheng ; Kyung, Gear Inpyo ; Shrestha, Bhanu ; Kim, Nam-Young
Author_Institution :
RFIC Center, Kwangwoon Univ., Seoul
Abstract :
Conclusions IPD technology is paramount in furthering the performance and integration of functionality as well as shrinking in size in RF front-end systems. The proposed fabrication process enables a high performance integration of passive technology; the reliable NiCr TFR, spiral inductor with high Q factor, and MIM capacitor of compact size with high yield are realized by the IPD technology, and Wilkinson power divider is fabricated with excellent RF performances.
Keywords :
Q-factor; microwave circuits; IPD technology; MIM capacitor; Q factor; RF applications; RF front-end systems; Wilkinson power divider; high performance integrated passive technology; microwave applications; spiral inductor; Copper; Fabrication; Gold; MIM capacitors; Microwave technology; Radio frequency; Resistors; Spirals; Substrates; Thin film inductors;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958020
