• DocumentCode
    3480695
  • Title

    The effect of nickel thickness in nickel-induced-lateral-crystallization of amorphous Si

  • Author

    Cheng, C.F. ; Leung, T.C. ; Chan, W.Y. ; Poon, M.C.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Sai Kung, China
  • Volume
    2
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    838
  • Abstract
    Nickel-Induced-Lateral-Crystallization (NILC) is highly considered as a low temperature alternative method for Solid-Phase-Crystallization (SPC). It can be employed to fabricate high performance TFTs. In this paper, the effect of Ni thickness on NILC was studied. It was found that the performance of an NILC TFT was improved when a thicker nickel thin film was used in the NILC process
  • Keywords
    MOSFET; amorphous semiconductors; crystallisation; elemental semiconductors; metallic thin films; nickel; semiconductor technology; silicon; silicon-on-insulator; thin film transistors; NILC TFT; Ni induced lateral crystallization; Ni thickness; Ni thin film; Ni-SiO2-Si-SiO2-Si; SOI technology; amorphous Si; high performance TFTs; metal induced lateral crystallization; poly-Si layer; Amorphous materials; Amorphous silicon; Annealing; Crystallization; Fabrication; Nickel; Performance analysis; Temperature; Thin film transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    TENCON 2001. Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology
  • Print_ISBN
    0-7803-7101-1
  • Type

    conf

  • DOI
    10.1109/TENCON.2001.949711
  • Filename
    949711
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3480695