DocumentCode
3480740
Title
Advanced microwave ion source for 100 mA-class SIMOX ion implantation
Author
Tokiguchi, Katsumi ; Seki, Takayoshi ; Amemiya, Kensuke ; Yamashita, Yasuro
Author_Institution
Power & Ind. Syst. R&D Div., Hitachi Ltd., Ibaraki, Japan
fYear
1996
fDate
16-21 Jun 1996
Firstpage
287
Lastpage
290
Abstract
To produce SIMOX wafers with high throughput, a compact and long lifetime microwave ion source for 100 mA-class oxygen ion implantation was newly developed. The ion source operated stably for more than 3 months with no maintenance under the beam extraction condition of 150 mA at 50 kV. When the source was installed in a SIMOX ion implanter, operation test showed that the ion source is suited to 100 mA-class ion implantation, giving volume production of high quality SIMOX wafers
Keywords
SIMOX; ion implantation; ion sources; 100 mA; SIMOX wafer; Si:O; advanced microwave ion source; lifetime; oxygen ion implantation; throughput; volume production; Ambient intelligence; Ion implantation; Ion sources; Plasma density; Plasma immersion ion implantation; Plasma sources; Plasma waves; Rectangular waveguides; Transmission lines; Waveguide components;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586264
Filename
586264
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