• DocumentCode
    3480847
  • Title

    Failure analysis of Au-Ge solder in microwave circuit packaging

  • Author

    Lili Ma ; Xinglin Huang ; Jie Zha

  • Author_Institution
    Microwave Circuit & Syst. Inst.(MCSI), Chengdu, China
  • fYear
    2013
  • fDate
    11-14 Aug. 2013
  • Firstpage
    946
  • Lastpage
    949
  • Abstract
    The Au-Ge eutectic solder has good thermal properties and a melting temperature of 356°C, which is widely used in high power microwave modules. However, there were a few papers investigated the reliability of Au-Ge solder. This paper focused on the failure of Au-Ge eutectic solder in microwave circuit. The interfacial reactions between the Au-Ge eutectic solder alloys and the electroless nickel immersion gold (ENIG) were studied. The microstructure of the samples was observed and analyzed by the scanning electron microscope (SEM) equipped with an energy dispersed X-ray analyzer (EDX). The reliability of the solder joint was influenced by the intermetallic compounds (IMC) formed between the bulk solder and the under-bump metallization (UBM) layer. The soldering temperature, duration and thickness of gold layer affected the IMCs. High soldering temperature or long duration lead to grain coarsening of IMCs and fast consumption of gold layer. As the gold layer dispersed into solder, nickel layer reacted with germanium of solder layer, formed Ni-Ge alloy which sharply decreased the solder shear strength. Based on the failure modes in this work, improving methods were extensively discussed.
  • Keywords
    X-ray chemical analysis; eutectic alloys; failure analysis; germanium alloys; gold alloys; integrated circuit metallisation; integrated circuit packaging; microwave integrated circuits; nickel alloys; scanning electron microscopes; soldering; solders; Au-Ge; Au-Ge eutectic solder alloy; EDX; ENIG; Ni; SEM; UBM layer; electroless nickel immersion gold; energy dispersed X-ray analyzer; failure analysis; gold layer; high power microwave module; interfacial reaction; intermetallic compound; microwave circuit packaging; nickel layer; scanning electron microscope; solder joint reliability; solder shear strength; soldering temperature; temperature 356 C; thermal property; under-bump metallization layer; Gold; Joints; Nickel; Reliability; Soldering; Substrates; Au-Ge eutectic solder; Ni-Ge alloy; failure; high power microwave modules; intermetallic compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
  • Conference_Location
    Dalian
  • Type

    conf

  • DOI
    10.1109/ICEPT.2013.6756616
  • Filename
    6756616