• DocumentCode
    348113
  • Title

    Reduction of probe to pad contact resistance: technology development targeted for cost effectiveness Pentium II(R) processors testing

  • Author

    Roggei, A. ; Seshan, Krishna

  • Author_Institution
    Intel, Qiryut Gat, Israel
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    217
  • Lastpage
    219
  • Abstract
    This paper presents work done during the technology development phase in Intel. The goal was to achieve capability and cost effectiveness for high volume manufacturing of Pentium II(R) processors. The work addressed problems in wafer testing of high-speed microprocessors. These problems stem from the phenomenon of resistance increase between probes and pads during the probing process (contact resistance). This work eliminated the root cause of probing process problems using an innovative approach of Fab process improvement. The result was a robust probing process on time for introduction of the product line. Harnessing technology development for high manufacturability saved many millions of dollars during high volume production of WireBond tight pitch, high-speed microprocessors
  • Keywords
    contact resistance; cost-benefit analysis; integrated circuit economics; integrated circuit testing; lead bonding; microprocessor chips; probes; production testing; surface cleaning; Pentium II processor testing; WireBond tight pitch; cleaning process; cost effectiveness; cost of ownership; high volume manufacturing; high-speed microprocessors; pad surface; probe to pad contact resistance reduction; probing process problems; sort testing friendly fab process; technology development phase; wafer testing; Atherosclerosis; Chromium; Cleaning; Contact resistance; Costs; Fabrication; Manufacturing processes; Microprocessors; Probes; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-5403-6
  • Type

    conf

  • DOI
    10.1109/ISSM.1999.808775
  • Filename
    808775