DocumentCode
3481130
Title
Influence of pre-existing void in the solder joint on electromigration behavior of Cu/Sn58Bi/Cu joints
Author
Wu Yue ; Min-Bo Zhou ; Hong-Bo Qin ; Xiao Ma ; Xin-Ping Zhang
Author_Institution
Sch. of Mater. Sci. & Eng., South China Univ. of Technol., Guangzhou, China
fYear
2013
fDate
11-14 Aug. 2013
Firstpage
1005
Lastpage
1009
Abstract
The influence of the pre-existing void in the Cu/Sn-58Bi/Cu solder joint on electromigration behavior was investigated by in-situ SEM observation and focused ion beam (FIB) analysis. The results show that the void with smooth internal surface has no influence on the Bi atom migration, while the one with a sharp notch may easily result in Bi atom congregation and further lead to the formation of cracks there, indicating that the void with a sharp notch can deteriorate the reliability of the solder joint undergoing current stressing. In the meantime, the pre-existing void near the cathode can enhance the electromigration diffusion flux of Bi atoms and accelerate the ripening of the microstructure of the solder matrix. The comparative analysis reveals that the inhibition of Bi atom migration by the notch tip and the imbalanced shear stress along both sides of the notch tip induced by the Bi congregation are the main reason leading to the formation of cracks, while the reduction of the effective contact area and the high Joule heating are the root cause of the higher electromigration diffusion flux in the solder joint with a pre-existing void near the cathode side.
Keywords
bismuth alloys; copper; cracks; electromigration; focused ion beam technology; solders; tin alloys; voids (solid); Cu-SnBi-Cu; Joule heating; contact area; electromigration behavior; electromigration diffusion flux; focused ion beam analysis; in situ SEM observation; notch tip; preexisting void; sharp notch; shear stress; smooth internal surface; solder joint; solder matrix; Anodes; Bismuth; Cathodes; Electromigration; Joints; Microstructure; Soldering; Crack; Cu/Sn58Bi/Cu solder joint; Electromigraiton; Inhibittion effect; Pre-existion void;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location
Dalian
Type
conf
DOI
10.1109/ICEPT.2013.6756629
Filename
6756629
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