• DocumentCode
    3481158
  • Title

    Red light emission properties of porous silicon

  • Author

    Prokes, S.M.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    2
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    11
  • Abstract
    The discovery of visible luminescence from porous silicon has generated significant interest, in view of the fact that bulk silicon does not emit light in the visible part of the spectrum. This material differs from bulk silicon in one important way, that is, it consists of interconnected silicon structures, which in some cases are on the order of several nanometers, having a very large surface to volume ratios, Thus, in a material such as this, both the effect of particle size and surfaces must be examined in order to determine the optical behavior of this system. The mechanism leading to intense room temperature visible photoluminescence (PL) exhibited by porous silicon (PoSi) is still a source of controversy. Although significant data on PoSi exist, no single model has been able to consistently explain all the results. The authors discuss the competing models for the source of the luminescence
  • Keywords
    elemental semiconductors; Si; intense room temperature visible photoluminescence; interconnected Si structures; optical behavior; particle size; photoluminescence; porous Si; red light emission properties; surfaces; visible luminescence; Crystallization; Laboratories; Luminescence; Optical interconnections; Optical materials; Photoluminescence; Potential well; Radiative recombination; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.586284
  • Filename
    586284