DocumentCode
3481158
Title
Red light emission properties of porous silicon
Author
Prokes, S.M.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
11
Abstract
The discovery of visible luminescence from porous silicon has generated significant interest, in view of the fact that bulk silicon does not emit light in the visible part of the spectrum. This material differs from bulk silicon in one important way, that is, it consists of interconnected silicon structures, which in some cases are on the order of several nanometers, having a very large surface to volume ratios, Thus, in a material such as this, both the effect of particle size and surfaces must be examined in order to determine the optical behavior of this system. The mechanism leading to intense room temperature visible photoluminescence (PL) exhibited by porous silicon (PoSi) is still a source of controversy. Although significant data on PoSi exist, no single model has been able to consistently explain all the results. The authors discuss the competing models for the source of the luminescence
Keywords
elemental semiconductors; Si; intense room temperature visible photoluminescence; interconnected Si structures; optical behavior; particle size; photoluminescence; porous Si; red light emission properties; surfaces; visible luminescence; Crystallization; Laboratories; Luminescence; Optical interconnections; Optical materials; Photoluminescence; Potential well; Radiative recombination; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586284
Filename
586284
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