A novel method for resist removal after etching of the organic SOG layer with the use of adhesive tape

A novel methods for resist removal, which is applicable to Cu wiring fabrication, is described here. With the use of a well-designed adhesive tape, the resist can be removed from the silicon wafer very easily, after the dry etching process of the interlayer dielectric consisting of an organic spin-on-glass (SOG) layer. Organic contamination of the wafer is comparatively satisfactory, and there is no organic material residue from the adhesive tape. Furthermore, the characteristic of this removal process, using adhesive tape, causes no oxidation damage to the organic SOG layer observed by using the conventional O₂ plasma ashing method. The adhesive tape process is fairly useful in fabrication, using organic low-dielectric-constant (low-k) materials such as the organic SOG layer, and seems to be applicable to other resist removing processes in which the plasma ashing application would not be used