DocumentCode
3481217
Title
Porous silicon light emitting diodes
Author
Peng, C. ; Tsybeskov, L. ; Duttagupta, S.P. ; Kurinec, S.K. ; Fauchet, P.M.
Author_Institution
Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
15
Abstract
The authors report the results of a systematic study of light-emitting devices made of porous silicon. The threshold for detectable electroluminescence is 5 V, the external efficiency reaches 0.01% at larger voltages and the LED output is stable for more than 100 hours of operation
Keywords
silicon; 0.01 percent; 100 h; 5 V; LED output; Si; electroluminescence; external efficiency; light emitting diodes; Light emitting diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586287
Filename
586287
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