• DocumentCode
    3481275
  • Title

    Optoelectronic properties of low-temperature III-Vs

  • Author

    Witt, Gerald L.

  • Volume
    2
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    19
  • Abstract
    Very high quality GaAs is routinely grown via molecular beam epitaxy (MBE) under the following growth conditions: substrate temperature (Ts)=600°C, As/Ga flux ratio≈10:1 and growth rate=1 μm/hr. It also is possible to grow crystalline GaAs by MBE under the conditions above except for Ts=200 °C. The author summarizes important physical constants for the annealed low temperature (LT) GaAs, using normal MBE GaAs for comparison. The properties of LT GaAs can be varied greatly by changing the growth and annealing parameters. LT growth has been extended to a number of other III-V materials including AlGaAs, InGaAs, InAlAs, GaP and InGaP
  • Keywords
    Annealing; Bandwidth; Fingers; Gallium arsenide; III-V semiconductor materials; Molecular beam epitaxial growth; Optical materials; Photoconducting materials; Stripline; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.586290
  • Filename
    586290
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3481275