DocumentCode
3481375
Title
2-D electro-optic sampling in GaAs photoconductive switches
Author
Donaldson, W. ; Jacobs-Perkins, D. ; Hsiang, Thomas
Author_Institution
Lab. for Laser Energetics, Rochester Univ., NY
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
23
Abstract
The electro-optic imaging system has been used to observe the dynamics of photoconductive switching in GaAs. GaAs has two distinct regions of operation. At biases below 3-6 kV/cm (depending on material preparation) the switches behave in a simple fashion. The field collapses with the integral of the absorbed light and then recovers as the carriers recombine. Above 6 kV/cm the electric field across the switches exhibit transient anomalies. This technique could also be used for other semiconductor devices such as integrated circuits
Keywords
gallium arsenide; GaAs; absorbed light; carrier recombination; dynamics; electric field; electro-optic imaging system; electro-optic sampling; field collapse; integrated circuits; photoconductive switches; semiconductor devices; transient anomalies; Gallium arsenide; Photoconductivity; Sampling methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586293
Filename
586293
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