Title :
Growth and properties of GaN films
Author_Institution :
Boston Univ., MA, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
A comprehensive study on the growth and properties of GaN films is presented. The films were grown by the electron cyclotron resonance microwave plasma assisted MBE method. The heteroepitaxial growth was carried out on a variety of substrates in two temperature steps in order to separate the nucleation and growth phases. The transport, optical and photoluminescence properties of GaN are discussed
Keywords :
gallium compounds; GaN; GaN films; electron cyclotron resonance microwave plasma assisted MBE method; growth; growth phases; heteroepitaxial growth; nucleation; optical properties; photoluminescence properties; transport properties; Cyclotrons; Electrons; Gallium nitride; Microwave theory and techniques; Molecular beam epitaxial growth; Optical films; Plasma properties; Plasma temperature; Plasma transport processes; Resonance;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586294
