Practical techniques for optical characterization of III-V heterostructures

This paper discusses two optical measurements, photoluminescence (PL) and Raman spectroscopies, and their use for analysis of the structure of III-V heterointerfaces grown by molecular beam epitaxy and organo-metallic vapor phase epitaxy. The emphasis here is on using these techniques in ways that require only simple, semi-quantitative analyses. The simple analyses enable rapid determinations of the structures of samples. The quick turn around time of the measurements and conclusions makes it possible to optimize the epitaxial growth by iterating the cycle of grow/characterize/regrow rapidly enough (a few cycles/day), so that the conditions in the epitaxial reactor do not drift appreciably