Device simulation of pentacene based organic field-effect transistors

In this paper we describe the major modifications, which have to be applied to a drift diffusion device simulator in order to simulate the electrical as well as the temperature behaviour of organic FETs (OFETs). In particular we use a charge carrier mobility which depends on the electric field and on the temperature. These modifications have been implemented in a device simulator developed by the author, which is based on a two dimensional drift-diffusion-model and which solves the static semiconductor equations. We demonstrate that this modification suffices for a good agreement between simulation and measurement.