High reliability, high performance 1300 nm, 1480 nm GaInAsP/InP GRIN-SCH strained-layer quantum well lasers

Author

Kasukawa, A. ; Namegaya, T. ; Tsukiji, N. ; Matsumoto, N. ; Ikegami, Y.

Author_Institution

R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan

Volume

2

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

49

Abstract

Summary form only given. Strained-layer quantum well lasers have been demonstrated to have low threshold current and high differential quantum efficiency. In this paper, we describe low threshold current and high temperature operations of 1300 nm lasers for fiber in the loop application and extremely high power 1480 nm lasers for pumping sources of Er-doped fiber amplifiers. Reliability tests of these lasers are also described

Keywords

gallium arsenide; 1300 nm; 1300 nm lasers; 1480 nm; Er-doped fiber amplifiers; GaInAsP-InP; GaInAsP/InP GRIN-SCH strained-layer quantum well lasers; extremely high power lasers; high differential quantum efficiency; high performance; high reliability; high temperature operation; low threshold current; pumping sources; reliability tests; Erbium-doped fiber amplifier; Fiber lasers; Indium phosphide; Laser excitation; Optical fiber testing; Power lasers; Pump lasers; Quantum well lasers; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586308

Filename

586308