Title :
Amorphous carbon for use in thin film transistors
Author :
Milne, W.I. ; Maeng, S.L. ; Kleinsorge, B. ; Uchikoga, S. ; Robertson, J.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
Tetrahedrally bonded amorphous carbon (ta-C) is a new type of semiconducting thin film material. It can be produced at room temperature using the filtered cathodic vacuum arc technique. The as-grown undoped ta-C is p-type in nature but it can be n-doped by the addition of nitrogen during deposition. This paper will describe thin film transistor design and fabrication using ta-C as the active channel layer
Keywords :
amorphous semiconductors; carbon; elemental semiconductors; plasma deposition; semiconductor growth; semiconductor thin films; thin film transistors; C; TFT design; TFT fabrication; active channel layer; as-grown undoped ta-C; density of states; filtered cathodic vacuum arc technique; ion energy dependence; n-doped by nitrogen; optical bandgap; p-type semiconductor; room temperature preparation; semiconducting thin film material; tetrahedrally bonded amorphous carbon; Amorphous materials; Bonding; Organic materials; Semiconductivity; Semiconductor materials; Semiconductor thin films; Temperature; Thin film transistors; Vacuum arcs; Vacuum technology;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810377
