Amorphous carbon for use in thin film transistors

Author

Milne, W.I. ; Maeng, S.L. ; Kleinsorge, B. ; Uchikoga, S. ; Robertson, J.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

1

fYear

1999

fDate

1999

Firstpage

11

Abstract

Tetrahedrally bonded amorphous carbon (ta-C) is a new type of semiconducting thin film material. It can be produced at room temperature using the filtered cathodic vacuum arc technique. The as-grown undoped ta-C is p-type in nature but it can be n-doped by the addition of nitrogen during deposition. This paper will describe thin film transistor design and fabrication using ta-C as the active channel layer

Keywords

amorphous semiconductors; carbon; elemental semiconductors; plasma deposition; semiconductor growth; semiconductor thin films; thin film transistors; C; TFT design; TFT fabrication; active channel layer; as-grown undoped ta-C; density of states; filtered cathodic vacuum arc technique; ion energy dependence; n-doped by nitrogen; optical bandgap; p-type semiconductor; room temperature preparation; semiconducting thin film material; tetrahedrally bonded amorphous carbon; Amorphous materials; Bonding; Organic materials; Semiconductivity; Semiconductor materials; Semiconductor thin films; Temperature; Thin film transistors; Vacuum arcs; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810377

Filename

810377