Current trends in the electrical characterization of low-k dielectrics

Author

Ionescu, A.M. ; Reimbold, G. ; Mondon, F.

Author_Institution

CEA, Centre d´´Etudes Nucleaires de Grenoble, France

Volume

1

fYear

1999

fDate

1999

Firstpage

27

Abstract

In this paper, current trends in the electrical characterization of low-k dielectrics for advanced interconnects, are presented. Emphasis is given to the study of moisture induced degradation and to the thermal effects in embedded interconnect architectures. The experimental results prove the necessity to provide new design guidelines for sub-0.25 μm interconnects

Keywords

VLSI; dielectric thin films; environmental stress screening; integrated circuit interconnections; integrated circuit reliability; leakage currents; permittivity; reviews; advanced interconnects; design guidelines; electrical characterization; embedded interconnect architecture; leakage currents; low-k dielectrics; moisture induced degradation; multilevel test structures; thermal conductivity; thermal effects; wafer level characterization; CMOS technology; Conducting materials; Dielectric materials; Dielectric measurements; Dielectrics and electrical insulation; Inorganic materials; Integrated circuit interconnections; Organic materials; Permittivity; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810382

Filename

810382